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dc.contributor.author Meinhardt, Cristina
dc.contributor.author Zimpeck, Alexandra Lackmann
dc.contributor.author Reis, Ricardo Augusto da Luz
dc.date.accessioned 2015-05-28T16:55:05Z
dc.date.available 2015-05-28T16:55:05Z
dc.date.issued 2014
dc.identifier.citation MEINHARDT, Cristina; ZIMPECK, Alexandra Lackmann; REIS, Ricardo Augusto da Luz. Predictive evaluation of electrical characteristics of sub-22 nm FinFET technologies under device geometry variations. Microelectronics Reliability, v. 54, p. 2319–2324, 2014. Disponível em: <http://www.sciencedirect.com/science/article/pii/S0026271414002194#>. Acesso em: 08 abr. 2015. pt_BR
dc.identifier.issn 0026-2714
dc.identifier.uri http://repositorio.furg.br/handle/1/4922
dc.description.abstract This work evaluates the impact on ION and IOFF currents of variations in process parameters for a set of predictive FinFET technologies from 20 nm to 7 nm. The main contribution of the present study is to identify relevant behavioural standards with respect to the use of FinFET technology in digital designs. It is no longer enough to focus only on the threshold voltage fluctuations in the development of projects and EDA tools considering the FinFET technology. It is necessary that EDA tools and designers evaluate all electrical characteristics. pt_BR
dc.language.iso eng pt_BR
dc.rights restrict access pt_BR
dc.subject FinFET device pt_BR
dc.subject Predictive technologies pt_BR
dc.subject Variability pt_BR
dc.title Predictive evaluation of electrical characteristics of sub-22 nm FinFET technologies under device geometry variations pt_BR
dc.type article pt_BR
dc.identifier.doi 10.1016/j.microrel.2014.07.023 pt_BR


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